New transistor brings high voltage to microchip scale
EPFL researchers have developed an intrinsic polarization superjunction (iPSJ) gallium nitride transistor that can withstand nearly 4 kV while maintaining low resistance, a record for this technology. The design balances charge sheets to prevent voltage concentration, eliminating the need for doping and improving robustness across temperature ranges. This advancement could enable compact, high‑voltage power electronics for AI data centers, electric vehicles, and renewable energy systems.
EPFL researchers have developed an intrinsic polarization superjunction (iPSJ) gallium nitride transistor that can withstand nearly 4 kV while maintaining low resistance, a record for this technology. The design balances charge sheets to prevent voltage concentration, eliminating the need for doping and improving robustness across temperature ranges. This advancement could enable compact, high‑voltage power electronics for AI data centers, electric vehicles, and renewable energy systems.
The high‑voltage, low‑loss transistor supports Swiss AI by improving power efficiency in data centers, reducing energy consumption and heat.
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